Abstract

This work focuses on the study of the effects of low and high doping rate of a silicon (n+/p/p+) solar cell in frequency modulation placed under magnetic field with Matlab Simulink software. The importance of this work is to highlight the effects of the doping rate and the magnetic field on the current-voltage characteristic, the open circuit voltage (Vco), the short circuit current and the efficiency. The doping rate is a variable parameter depending on the type of solar cell and mainly impacts the diffusion coefficient while all the electrical and phenomenological parameters of the solar cell depend on it. The study of the doping rate is therefore important in order to optimize the efficiency of the photo conversion. To perform the modeling, we determined through the continuity equation of the photocell the expressions for the short-circuit current, the open-circuit voltage and the efficiency of the solar cell.

Key words: Magnetic field, doping rate, solar cell, short-circuit current, open-circuit voltage.