A comprehensive study of the reduced graphene oxide (r-GO) Schottky diode is presented, to extort information about the Schottky interface. An efficient analysis was performed to investigate the interface traps and electrical properties by current–voltage (I–V), capacitance–voltage (C–V), capacitance–frequency (C–f), and conductance–frequency (Gp/?–?) measurements. The high value of the ideality factor (3.16) suggested the presence of interface states at the Schottky interface. To confirm the effect of interface states on the electrical properties of Schottky diodes, the current–voltage characteristics have been determined at different temperatures, in the range of 100–400 K and the deviations in the electrical parameters have been attributed to barrier in-homogeneities at the Schottky interface. Inconsistency was observed in Schottky diodes due to barrier inhomogeneities. A Gaussian distribution model has been used and it is concluded that the divergence in the electrical parameters can be revealed on the basis of a thermionic emission mechanism with Gaussian distributed barriers. The low value of Richardson’s constant obtained has been ascribed to inhomogeneities. The interface quality of the Schottky diode has been probed by the frequency-dependent capacitance and conductance methods which come to an agreement that the observed capacitance and conductance are caused by the same physical process.

Keywords: Schottky diode, reduced graphene oxide, interface states