Abstract
We describe two methods of extracting physical parameters of a non ideal p-n diodes. These include the ideality factor, saturation current and series resistance. The proposed techniques that treat extraction parameters, using the current-voltage characteristic (I,V) forward biased. The first method is to learn three different points of the curve, with the coordinates of these points, one can generate a system of nonlinear equations expressing the electrical parameters. The resolution of these non-linear equations was performed by the numerical method of Newton-Raphson. The second is based on the least squares method. Both methods are tested using programs developed in Matlab code based on the experimental characteristic (I-V) of two different diodes in silicon.
Key words: Diode characteristic, electrical parameters, w-function Lambert, equations of non-linear system, method of least squares.
